Wafer Etching System

33 Wafer Etching System for Space Applications from 17 manufacturers listed on Semiconductor Directory

Semiconductor directory has listed the leading wafer etching system manufacturers on this page. Narrow down the list of companies based on their location. A wafer etching system removes layers from silicon wafers using chemical or physical methods to create precise patterns for integrated circuits. It ensures high accuracy and minimal wafer damage.

Number Of Chambers:
1 to 5 sets
Process Type:
Wet Etching
Wafer Size:
8 Inches, 12 Inches
more info
Applications:
Plamsa Etching
Gases Control:
Up to 3 gas Line
MTBF MTTA MTTR:
450 hr, 100 hr, 3.5 hr
Net Weight:
127.006 kg
Overall Dimensions:
685.8 x 1016 x 1498.6 mm
Particulate:
0.15 cm2
Plasma Power:
13.56 MHz Aircooling RF Generator, 300 W, 600 W
Power Supply:
190-240 VAC, Single phase, 30A, 50/60 Hz
Process Chemistry Temperature:
20 to 120 Degree C (±2 Degree C)
Process Type:
Dry Etching
Selectivity:
>10:1(Oxide:PR, SiN:Oxide)
Substrate Temperature:
Up to 158.75 Inches
Substrates:
Oxide PR, SiN Oxide
Uniformity:
± 3 to 5 %
Uptime:
0.95
Wafer Size:
Up to 6.25 Inches
Wafer Thickness:
50 µm
more info
Applications:
Dielectric Etching
Etching Speed:
600 to 5000 A/min
Process Type:
Dry Etching
Substrates:
Si, P oly, SiC, GaN, Nitride, Oxide
Wafer Size:
4 Inches, 6 Inches, 12 Inches
more info
Air Supply:
5 Pa, 2L/min
Applications:
Plamsa Etching
Chamber Size:
150 mm, 200 mm
Gases Control:
10 to 300 sccm MFC
Overall Dimensions:
630 x 550 x 500 mm
Plasma Power:
13.56 MHz 500W
Power Supply:
220V, 50 Hz, 1500 W
Process Type:
Dry Etching
Substrates:
Stainless Steel
Wafer Size:
4 Inches, 6 Inches
more info
Process Type:
Dry Etching
Rotation Speed:
Etching - 500 rpm, Drying - 3000 rpm
Wafer Size:
300 mm
more info
Process Type:
Wet Etching
Repeatability:
0.2 rpm
Rotation Speed:
1 to 6000 rpm
Substrates:
Silicon
Wafer Size:
Up to 300 mm
more info
Prerinse Time:
0-9999 Seconds
Process Chemistry Temperature:
1 to 2 Degree C
Process Time:
0-9999 to 0.0-999.9 Seconds
Process Type:
Wet Etching
Quick Dump Cycle:
0 to 9999 Cycles
Rotation Speed:
0 to 80 rpm
Wafer Size:
152 mm
more info
Applications:
Plamsa Etching
Gases Control:
4 to 12 gas line
Process Type:
Dry Etching
Substrate Temperature:
Up to 400 Degree C
Substrates:
SiNx, SiO2, PECVD
Wafer Size:
300 mm
more info
Air Supply:
5 to 7 bar, 250 L/min
Applications:
Plamsa Etching
Gases Control:
4 gas Lines, 6 gas Lines max
N2 Consumption:
1 to 2 bar, 50 L/min
Net Weight:
2100 kg
Overall Dimensions:
1350 x 2230 x 2000 mm
Power Supply:
3 Phase AC 200-240V, ±10, 50/60 Hz, 21.00 kVA
Process Type:
Dry Etching
Substrates:
Silicon
Wafer Size:
100 mm
more info
Applications:
Plamsa Etching
Gases Control:
Up to 4 process gases
Plasma Power:
300 W, 1000 W RF power
Process Type:
Dry Etching
Substrates:
a-Si, poly Si, SiNx, SiO2
Wafer Size:
75 to 200 mm
more info