AW-303R

Wafer Etching System by Allwin21 Corp (3 more products)

Note : Your request will be directed to Allwin21 Corp.

AW-303R Image

Product Specifications

Product Details

  • Part Number
    AW-303R
  • Manufacturer
    Allwin21 Corp

General Parameters

  • Applications
    Plamsa Etching
  • Gases Control
    Up to 3 gas Line
  • MTBF MTTA MTTR
    450 hr, 100 hr, 3.5 hr
  • Net Weight
    127.006 kg
  • Overall Dimensions
    685.8 x 1016 x 1498.6 mm
  • Particulate
    0.15 cm2
  • Plasma Power
    13.56 MHz Aircooling RF Generator, 300 W, 600 W
  • Power Supply
    190-240 VAC, Single phase, 30A, 50/60 Hz
  • Process Chemistry Temperature
    20 to 120 Degree C (±2 Degree C)
  • Process Type
    Dry Etching
  • Selectivity
    >10:1(Oxide:PR, SiN:Oxide)
  • Substrate Temperature
    Up to 158.75 Inches
  • Substrates
    Oxide PR, SiN Oxide
  • Uniformity
    ± 3 to 5 %
  • Uptime
    0.95
  • Wafer Size
    Up to 6.25 Inches
  • Wafer Thickness
    50 µm

Technical Documents