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scia Mill 300

Wafer Etching System by Scia Systems GmbH (2 more products)
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Product Specifications

Product Details

  • Part Number
    scia Mill 300
  • Manufacturer
    Scia Systems GmbH

General Parameters

  • Applications
    Ion Beam Etching
  • Base Pressure
    5 x 10-7 mbar
  • Ion Beam Source
    450 mm circular RF source
  • Number Of Chambers
    Up to 3
  • Overall Dimensions
    2700 x 1500 x 2000 mm
  • Process Type
    Dry Etching
  • Rotation Speed
    1 to 20 rpm
  • Substrates
    GaAs, GaN, InP
  • Throughput
    Up to 12 wph
  • Typical Removal Rates
    60 nm/min
  • Uniformity
    2%
  • Wafer Size
    300 mm

Technical Documents