Thin Film Deposition Equipment

23 Thin Film Deposition Equipment for Space Applications from 6 manufacturers listed on Semiconductor Directory

Thin Film Deposition Equipment from the leading manufacturers are listed below. Use the filters to narrow down on products based on your requirement. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to the manufacturer and their distributors in your region.

ALD Processes:
DLI-CVD, DLI-ALD, MOCVD, RTP, RTCVD
Compressed Air:
6 bar
Net Weight:
400 kg
Overall Dimensions:
1604 x 955 x 1812 mm
Power Supply:
3x400V+N+Gr, 3x220V+Gr, 21 kW
Temperature Range:
Up to 1100 Degree C
Type:
ALD Process, CVD Process
Uniform Gas:
Up to 8 Gas Lines
Wafer Size:
Up to 2 Inches
Water:
2 to 4 bars, pressure drop 1 bar, 8 l/mn
more info
ALD Processes:
Al2O3, SiO2, HfO2, Ta2O5, TiO2, AlN, TiN, ZnO, Si3N4
Batch Size:
25 x 300 mm wafers
Cooling Option:
Built-in
Integration:
SECS/GEM
Maximum Configuration:
3 Processing Modules & 1 Preheater
Number Of Plasma Lines:
3+1 optional
Overall Dimensions:
4400 x 4800 x 2250 mm
Safety Standards:
SEMI S2 and S8
Temperature Range:
420 Degree C (Batch), 350 Degree C (Plasma)
Throughput:
12 wafers/hour – 1 batch PM
Transfer Module:
M2C5
Type:
ALD Process
Wafer Size:
300 mm with 200 mm Bridge Capability
more info
ALD Processes:
Thermal ALD Process
No of Precursor Canisters:
Up to 4 Sets
Temperature Range:
450 Degree C
Type:
ALD Process
Wafer Size:
4 to 8 Inches
more info
Number of Heaters:
1 to 3 sets
Temperature Range:
Up to 400 Degree C
Type:
ALD Process
Uniform Gas:
Up to 5 Gas Lines
Vaccum:
7 Pa
Wafer Size:
4 to 8 Inches
more info
Process Pressure:
5 x 10-7 Torr
Temperature Range:
950 Degree C
Type:
PLD Deposition
Vaccum Chamber Dimensions:
12 Inches in diameter
Wafer Size:
1 Inches, 2 Inches
more info
ALD Processes:
Al2O3, HfO2, SiO2, TiO2, Ta2O5, ZnO, AZO, HfO2, SiO2, TiO2, GaO2, AlN, SiN
Response Time:
10 msec
Temperature Range:
Up to 400 Degree C (Thermal, Plasma)
Thin Film Uniformity:
±1%
Type:
ALD Process
Wafer Size:
Up to 300 mm
more info
ALD Processes:
DLI-CVD, DLI-ALD
Compressed Air:
6 bar
Net Weight:
800 kg
Overall Dimensions:
2104 x 1000 x 2062 mm
Power Supply:
3x400V+N+Gr, 3x220V+Gr, 12 kW
Temperature Range:
Up to 800 Degree C
Type:
ALD Process, CVD Process
Uniform Gas:
Up to 8 Gas Lines
Wafer Size:
Up to 100 mm
Water:
2 to 4 bar, 1 bar, 4 l/mn
more info
ALD Processes:
Al2O3, SiO2, HfO2, Ta2O5, TiO2, TiN, AlN, SiNx, ZnO, ZrO
Batch Size:
200 mm x 25 wafers
Cooling Option:
Built-In
Integration:
SECS/GEM
Maximum Configuration:
3 ALD Modules + Pre-Heater
Number Of Plasma Lines:
2 + 2 optional
Overall Dimensions:
3120 x 4070 x 2140 mm
Temperature Range:
25 to 420 Degree C
Throughput:
15 wafers/hour (1PM), >40 wafers/hour (3PM’s)
Transfer Module:
Brooks Mx600SS
Type:
ALD Process
VCE Loadlocks:
2
Wafer Size:
3 Inches, 4 Inches, 6 Inches, 8 Inches
more info
ALD Processes:
Thermal ALD Process
No of Precursor Canisters:
Up to 4 Sets
Process Pressure:
10 Torr
Temperature Range:
500 Degree C
Type:
ALD Process
Wafer Size:
4 to 12 Inches
more info
Process Pressure:
5 x 10-7 Torr, 5 x 10-9 Torr
Temperature Range:
850 Degree C
Type:
PLD Deposition
Vaccum Chamber Dimensions:
12 Inches in diameter
Wafer Size:
10 x 10 mm to 50 mm
more info