Wire Bonders

80 Wire Bonders for Space Applications from 17 manufacturers listed on Semiconductor Directory

Wire Bonders from the leading manufacturers are listed below. Use the filters to narrow down on products based on your requirement. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to the manufacturer and their distributors in your region.

Bonding Area:
330.2 x 152.4 mm
Bonding Method:
Ball Bonder
Net Weight:
875 kg
Bond Froce:
5 to 200 g
Overall Dimensions:
1737 x 1197 x 1073 mm
Power Supply:
230 VAC +/- 10% (207-253), 50/60 Hz, 15AMP, Single Phase
Bond Time:
0.115 sec/wire, 0.075 sec/bump
Capture Range:
760 to 1300 µm
Deep Access Capillary:
11.10 mm, 11.94 mm, 15.88 mm
Focus Range:
15.24 mm
Gold Wire Size:
17.8 to 50.8 µm
Placement Accuracy:
2.5 µm
Programmable Linear Z axis:
20 mm
Repeatability:
2.5 µm
Step Resolution:
0.1 µm
Wire Pitch:
50 µm using 20 µm wire
Wire Spool Size:
50.8 mm
more info
Bond Speed:
1 Wire in sec
Bonding Area:
200 x 150 mm
Bonding Method:
Wedge Bonder
Net Weight:
80 kg
Aluminium Wire Size:
17.5 to 75 µm
Overall Dimensions:
920 x 710 x 650 mm
Power Supply:
100-240 VAC, 1 Phase, 50/60 Hz, max 230 VA
Gold Wire Size:
17.5 to 75 µm
Loop Height Accuracy:
5 µm
Placement Accuracy:
5 µm
Programmable Linear Z axis:
100 mm
Repeatability:
3 µm
Ribbon Size:
30 x 12.5 µm to 250 x 25 µm
Step Resolution:
1 µm
Temperature Control:
0 to 250 Degree C
Ultrasonic Frequency:
100 kHz
Wire Spool Size:
2 Inches
more info
Bond Speed:
40 ms/wire
Bonding Method:
Wire Bonder, Ball Bonder
Leadframe Dimensions:
83 mm
Placement Accuracy:
±2 µm
more info
Bonding Area:
16 mm dia
Bonding Method:
Wire bonder
Net Weight:
36 kg
Bond Froce:
10 to 60 g
Overall Dimensions:
600 x 560 x 390 mm
Power Supply:
220 VAC ± 10%, 50Hz
Bond Time:
5 to 200 ms
Copper Wire Size:
25 to 75 µm
Ultrasonic Power:
0 to 3 W, 60 kHz
more info
Bonding Method:
Wedge Bonder
Net Weight:
1150 kg
Overall Dimensions:
740 x 1484 x 1912 mm
Power Supply:
230V AC
Copper Wire Size:
50 to 600 µm
Motorized X and Y Travel:
305 x 410 mm
Motorized Z Travel:
42 mm
Ribbon Size:
250 x 25 µm up to 2000 x 400 µm
more info
Bonding Method:
Ball Bonder, Wedge Bonder, Wire Bonder
Net Weight:
31.8 kg
Bond Froce:
12 to 250 g
Power Supply:
90-260 VAC 50/60 Hz @ 10A
Bond Time:
0 to 900 ms
Gold Wire Size:
12.7 to 76 µm
Motorized Z Travel:
19 mm
Ribbon Size:
25.4 x 510 µm
Temperature Control:
Ambient to 250 Degree C
Ultrasonic Frequency:
62.5 kHz
Ultrasonic Power:
0 to 0.2 W to, 0 to 2 W
more info
Bonding Area:
56 x 80 mm
Bonding Method:
Ball Bonder
Net Weight:
550 kg
Aluminium Wire Size:
12 to 75 µm
Overall Dimensions:
1200 x 1085 x 1728 mm
Bond Time:
43 ms/wire
Leadframe Dimensions:
295 x 90 mm
Magazine Dimensions:
305 x 110 x 175 mm
Placement Accuracy:
±2.5 µm
more info
Bonding Area:
56 x 88 mm
Bonding Method:
Ball Bonder
Net Weight:
550 kg
Overall Dimensions:
1065 x 1175 x 1725 mm
Bond Time:
45 ms/wire
Magazine Dimensions:
115 x 305 x 175 mm
Placement Accuracy:
? 2.0 µm
Workpiece Size:
100 x 300 mm
more info
Air Consumption:
75 L/min
Bonding Area:
56 x 87 mm
Air Pressure:
3.52 kg/sq cm
Bonding Method:
Wire Bonder
Net Weight:
556 kg
Overall Dimensions:
Base Machine with MHS x 556 x 670 mm
Power Supply:
200-240 VAC, -15% to 10%, Single Phase, 50/60 Hz, 1.3 KVA
Bonding Wire Length:
7.6 mm
Die Pad Downset:
Up to 2.3 mm
Different Leadframe Type:
8 min
Gold Wire Size:
25.4 µm
Leadframe Dimensions:
300 x 95 mm
Magazine Dimensions:
305 x 98 x 178 mm
Minimum Loop Height:
100 µm, 70 µm, 50 µm
Placement Accuracy:
3 µm
Same Leadframe Type:
4 min
Wire Pitch:
1.27 to 25 mm
Wire Sway:
25 µm
more info
Bonding Area:
135 x 135 mm
Bonding Method:
Wedge Bonder
Net Weight:
31 kg
Bond Froce:
10 to 250 g
Overall Dimensions:
680 x 700 x 530 mm
Power Supply:
100 - 240V, 50/60 Hz
Bond Time:
10 to 100 ms, 10 to 1000 ms
Bonding Tool:
0.0750 to 1 Inches
Copper Wire Size:
17 to 50 µm
Fine Table Motion:
14 mm
Gold Wire Size:
17 to 75 µm
Gross Table Motion:
140 mm
Motorized X and Y Travel:
4 mm, 0.25 mm, 0.5 mm
Motorized Z Travel:
12.5 mm
Ribbon Size:
25 x 250 µm
Temperature Control:
Up to 250 Degree C
Throat Depth:
143 mm
Ultrasonic Frequency:
60 kHz
Ultrasonic Power:
1.3 to 2.5 W
Wire Feed Angle:
90 Degree
Wire Spool Size:
51 x 25 mm
more info

What is a wire bonding machine?

A wire bonding machine (also called a wire bonder) is specialized equipment used to perform wire bonding in the semiconductor device manufacturing industry. The bonding process utilizes fine wires, typically made of gold, aluminum, copper, or silver, to connect bond pads on the die (IC) to the leads of the package, creating electrical connections between the die and its packaging. The wire diameter typically ranges from 8 μm up to several hundred micrometers, e.g., 500 μm for high-powered applications. Wire bonding is essential for ensuring reliable signal transmission and power distribution within the device, as well as ensuring the device's reliable performance.

Figure 1: Wire bonding concept and wire bonding machine shown

Ball bonding and wedge bonding are the two main categories of wire bonding. Typically, wire bonding machines are designed to perform either ball bonding or wedge bonding due to the different processes and tools involved. However, some machines are available to perform both types of bonding; they usually require significant reconfiguration and different tooling. Modern wire bonding machines mostly utilize ultrasonic energy, pressure, temperature, and time (i.e., Thermosonic method) for the bonding process. The machine may also use the Thermo-compression Method or Ultrasonic Method.

Key components:

The key components of a thermosonic-based wire bonder machine include an ultrasonic generator, bonding tools (capillary or wedge tools), a work table (to place the semiconductor chip), a wire feeder (to feed wires), a heating system, a clamping system, a positioning system (to position the bonding tool), a control system, and other supporting systems.  

How does a wire bonding machine work?

Ball bonding: In this bonding process, the wire bonder machine uses a capillary tool (fed with wire) to form a ball at the wire tip by applying an electrical spark. Then, the machine moves down the tool vertically, places the ball on a bond pad on the die, and applies pressure, heat, and ultrasonic energy for a certain period. This process forms a metallurgical bonding (first bond) between the wire and the pad. Then, the machine moves the capillary tool to the target pad (lead frame) on the package substrate, forming a loop. 

Figure: Ball bonding process

Now, the machine moves down the tool, places the wire on the target pad (or lead frame), and applies pressure, heat, and ultrasonic energy for a certain period to create a second bond. The second bond is called the wedge bond (tail bond), which is formed without ball formation. After creating the second bond, the machine lifts the bonding tool and breaks or cuts the wire to get ready for the next wire bonding.  The ball bonding process is fast and commonly used with gold and copper wires, ideal for die-to-lead frame connections.

Wedge bonding: In this bonding process, the wire bonding machine uses a wedge tool to press the wire onto the die pad and applies ultrasonic and/or thermal energy. This process creates a first wedge bond between the wire and pad. This bonding technique works without creating a ball. Next, the machine moves the tool to the target pad on the package substrate, forming a loop, and follows the same bonding procedure used in the first wedge bond creation to create a second wedge bond.  After creating the second bond, the machine lifts the bonding tool and breaks or cuts the wire to get ready for the next wire bonding.

Figure: Wedge bonding

The wedge bonding process is generally used with gold and aluminum wires and is ideal for small bond pads and high-frequency applications. This bonding process supports the use of ribbon-shaped wires for high-power interconnects. Note that it is slow process as compared to ball bonding.

Applications:

Wire bonding machines are used to perform wire bonding process for a variety of semiconductor devices,  including MEMS sensors, memory chips, microprocessors, accelerometers, power devices like MOSFETs and IGBTs, optoelectronics such as LED chips, Bluetooth/WiFi radiofrequency devices, multi-chip modules (MCMs), etc. 

They come in manual, semi-automatic, and fully automatic versions and can support different modes (i.e., ball bonding/wedge bonding, or both). These machines can be integrated into the semiconductor device production lines.