Thin Film Deposition Equipment - Page 3

23 Thin Film Deposition Equipment from 6 Manufacturers meet your specification.
CVD Processes:
SiOx, SiNx, a-Si, DLC and other films
Temperature Range:
Up to 1700 Degree C
Thin Film Uniformity:
±5%
Type:
CVD Process
Uniform Gas:
Up to 10 Gas Lines
Wafer Size:
Up to 8 Inches
more info
CVD Processes:
SiOx, SiNx, a-Si, DLC and other films
Integration:
Load-Lock, Glove Box
Process Pressure:
50 to 10-3torr
Temperature Range:
Up to 700 Degree C
Type:
CVD Process
Uniform Gas:
Up to 10 Gas Lines
Wafer Size:
Up to 12 Inches
more info
CVD Processes:
a-Si, SiNx, SiOx
Temperature Range:
380 Degree C
Thin Film Uniformity:
±3%
Type:
CVD Process
Uniform Gas:
Up to six 7 gas lines
Wafer Size:
Up to 550 x 650 mm2
more info