Thin Film Deposition Equipment - Page 2

23 Thin Film Deposition Equipment from 6 Manufacturers meet your specification.
ALD Processes:
Thermal ALD, Plasma-Enhanced ALD
Integration:
Stand-Alone, Cluster, Glovebox, Loadlock
Overall Dimensions:
1325 x 600 x 1298 mm
Substrate Type:
Up to 200 mm round wafers, Up to 200 x 200 mm square wafers, Wafer batch, 3D parts, Particles, Porous and high aspect ratio structures
Temperature Range:
25 to 500 Degree C
Type:
ALD Process
Usage:
Research & Development, Production
Vaccum Chamber Dimensions:
200 x 95 mm
more info
ALD Processes:
Thermal ALD, Plasma-Enhanced ALD
Integration:
Stand-Alone, Cluster, Glovebox, Loadlock
Overall Dimensions:
1800 x 900 x 2033 mm
Substrate Type:
Up to 300 mm round wafers, Up to 300 x 300 mm square wafers, Wafer batch / 3D parts up to 300 x 350 x 125 mm, Porous and high aspect ratio structure
Temperature Range:
25 to 500 Degree C
Type:
ALD Process
Usage:
Research & Development, Production
Vaccum Chamber Dimensions:
200 x 170 mm
more info
ALD Processes:
Plasma-Enhanced ALD, Single-side coating
Automation:
Brooks MX400 Transfer Module Optional preheating and cooling
Batch Capacity:
7 pcs of 200 mm wafer
Deposition Rate:
Up to 1.5 µm/hr
Integration:
Cluster or Stand-Alone
Number Of Plasma Lines:
Up to 3 Lines
Overall Dimensions:
3770 x 1284 x 1948 mm
Substrate Type:
Wafers, Lenses, Mirrors
Temperature Range:
25 to 200 Degree C
Transfer Module:
Brooks MX400
Type:
ALD Process
Uniform Gas:
Up to 3 Gas Lines
more info
ALD Processes:
Thermal ALD Process
No of Precursor Canisters:
Up to 4 Sets
Temperature Range:
450 Degree C
Type:
ALD Process
Wafer Size:
4 to 8 Inches
more info
ALD Processes:
Thermal ALD Process
No of Precursor Canisters:
Up to 4 Sets
Process Pressure:
10 Torr
Temperature Range:
500 Degree C
Type:
ALD Process
Wafer Size:
4 to 12 Inches
more info
Number of Heaters:
1 to 3 sets
Temperature Range:
Up to 400 Degree C
Type:
ALD Process
Uniform Gas:
Up to 5 Gas Lines
Vaccum:
7 Pa
Wafer Size:
4 to 8 Inches
more info
Process Pressure:
5 x 10-7 Torr
Temperature Range:
950 Degree C
Type:
PLD Deposition
Vaccum Chamber Dimensions:
12 Inches in diameter
Wafer Size:
1 Inches, 2 Inches
more info
Process Pressure:
5 x 10-7 Torr, 5 x 10-9 Torr
Temperature Range:
850 Degree C
Type:
PLD Deposition
Vaccum Chamber Dimensions:
12 Inches in diameter
Wafer Size:
10 x 10 mm to 50 mm
more info
ALD Processes:
Al2O3, HfO2, SiO2, TiO2, Ta2O5, ZnO, AZO, HfO2, SiO2, TiO2, GaO2, AlN, SiN
Response Time:
10 msec
Temperature Range:
Up to 400 Degree C (Thermal, Plasma)
Thin Film Uniformity:
±1%
Type:
ALD Process
Wafer Size:
Up to 300 mm
more info
CVD Processes:
SiOx, SiNx, a-Si, DLC
Integration:
Load-Lock, Glove Box
Temperature Range:
Up to 400 Degree C
Thin Film Uniformity:
±3%
Type:
CVD Process
Uniform Gas:
Up to 10 Gas Lines
Wafer Size:
Up to 12 Inches
more info