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Esec 2100 hSi

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Product Specifications

Product Details

  • Part Number
    Esec 2100 hSi
  • Manufacturer
    BE Semiconductor Industries N.V.

General Parameters

  • Bond Force
    0.2 to 20 N
  • Bonding Method
    Die Bonder
  • Frame Size
    203 x 305
  • Heated Bond Head
    200 Degree C max
  • Mean Time Between Failure
    > 200 h
  • Net Weight
    1400 kg
  • Overall Dimensions
    1785 x 1448 x 1400 mm
  • Standard Bond Head
    360 Degree
  • Substrate Thickness
    0.1 to 2.5 mm
  • Substrate Working Range
    300 x 100 mm
  • Type
    Automatic
  • Wafer Die attach Placement Speed
    Up to 18500 UPH
  • Wafer Die Attach Size
    0.5 to 20 mm
  • Wafer Die Thickness
    > 0.075 mm
  • Wafer Size
    4 to 12 Inches
  • X Y Placement Accuracy
    18 µm (High Speed Mode), 12 µm (Accuracy Mode), 10 µm (Up Looking Vision), 20 µm

Technical Documents
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