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Wafer Etching System - Page 2

33 Wafer Etching System from 17 Manufacturers meet your specification.
Wafer Etching System Image
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Japan Create Co.,Ltd - Wafer Etching System

Wafer Etching System from Japan Create Co.,Ltd
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Process Type:
Dry Etching
Rotation Speed:
Etching - 500 rpm, Drying - 3000 rpm
Wafer Size:
200 mm
more info
Wet Process Systems Image
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JST Manufacturing Inc - Wet Process Systems

Wafer Etching System from JST Manufacturing Inc
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Process Type:
Wet Etching
Repeatability:
0.2 rpm
Rotation Speed:
1 to 6000 rpm
Substrates:
Silicon
Wafer Size:
Up to 300 mm
more info
Model-SPS Image
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Modutek Corporation - Model-SPS

Wafer Etching System from Modutek Corporation
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Prerinse Time:
0-9999 Seconds
Process Chemistry Temperature:
1 to 2 Degree C
Process Time:
0-9999 to 0.0-999.9 Seconds
Process Type:
Wet Etching
Quick Dump Cycle:
0 to 9999 Cycles
Rotation Speed:
0 to 80 rpm
Wafer Size:
152 mm
more info
PlasmaPro 800 RIE Image
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Oxford Instruments Plasma Technology - PlasmaPro 800 RIE

Wafer Etching System from Oxford Instruments Plasma Technology
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Applications:
Plamsa Etching
Gases Control:
4 to 12 gas line
Process Type:
Dry Etching
Substrate Temperature:
Up to 400 Degree C
Substrates:
SiNx, SiO2, PECVD
Wafer Size:
300 mm
more info
PlasmaPro 100 Image
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Oxford Instruments Plasma Technology - PlasmaPro 100

Wafer Etching System from Oxford Instruments Plasma Technology
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Applications:
Plamsa Etching
Process Type:
Wet Etching
Substrate Temperature:
-150 to 400 Degree C
Substrates:
SiNx, SiO2, PECVD, VCSEL, GaAs, AlGaAs
Wafer Size:
up to 200 mm
more info
NM-EFE3AA Image
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Panasonic Corporation - NM-EFE3AA

Wafer Etching System from Panasonic Corporation
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Air Supply:
5 to 7 bar, 250 L/min
Applications:
Plamsa Etching
Gases Control:
4 gas Lines, 6 gas Lines max
N2 Consumption:
1 to 2 bar, 50 L/min
Net Weight:
2100 kg
Overall Dimensions:
1350 x 2230 x 2000 mm
Power Supply:
3 Phase AC 200-240V, ±10, 50/60 Hz, 21.00 kVA
Process Type:
Dry Etching
Substrates:
Silicon
Wafer Size:
100 mm
more info
NM-EFE3AA-D Image
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Panasonic Corporation - NM-EFE3AA-D

Wafer Etching System from Panasonic Corporation
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Air Supply:
5 to 7 bar, 250 L/min
Applications:
Plamsa Etching
Gases Control:
4 gas Lines
N2 Consumption:
1 to 2 bar, 50 L/min
Net Weight:
2000 kg
Overall Dimensions:
1375 x 2600 x 2000 mm
Power Supply:
3 Phase AC 200-240V, ±10, 50/60 Hz, 21.00 kVA
Process Type:
Dry Etching
Substrates:
Silicon
Wafer Size:
100 mm, 150 mm, 200 mm
more info
TEGAL Image
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Plasma-Therm - TEGAL

Wafer Etching System from Plasma-Therm
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Applications:
Plamsa Etching
Gases Control:
Up to 4 process gases
Plasma Power:
300 W, 1000 W RF power
Process Type:
Dry Etching
Substrates:
a-Si, poly Si, SiNx, SiO2
Wafer Size:
75 to 200 mm
more info
scia Mill 150 Image
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Scia Systems GmbH - scia Mill 150

Wafer Etching System from Scia Systems GmbH
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Applications:
Ion Beam Etching
Base Pressure:
5 x 10-7 mbar
Ion Beam Source:
190 mm circular microwave ECR source
Overall Dimensions:
1900 x 1800 x 1750 mm
Process Type:
Dry Etching
Rotation Speed:
1 to 20 rpm
Substrates:
GaAs, GaN, InP
Typical Removal Rates:
20 nm/min, 40 - 60 nm/min
Uniformity:
3%
Wafer Size:
150 mm
more info
scia Mill 200 Image
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Scia Systems GmbH - scia Mill 200

Wafer Etching System from Scia Systems GmbH
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Applications:
Ion Beam Etching
Base Pressure:
5 x 10-7 mbar
Ion Beam Source:
350 mm circular RF source
Overall Dimensions:
3200 x 2500 x 2500 mm
Process Type:
Dry Etching
Rotation Speed:
1 to 20 rpm
Substrates:
GaAs, GaN, InP
Throughput:
Up to 12 wph
Typical Removal Rates:
60 nm/min
Uniformity:
1%
Wafer Size:
200 mm
more info
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