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Wafer Etching System - Page 3

33 Wafer Etching System from 17 Manufacturers meet your specification.
scia Mill 300 Image
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Scia Systems GmbH - scia Mill 300

Wafer Etching System from Scia Systems GmbH
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Applications:
Ion Beam Etching
Base Pressure:
5 x 10-7 mbar
Ion Beam Source:
450 mm circular RF source
Number Of Chambers:
Up to 3
Overall Dimensions:
2700 x 1500 x 2000 mm
Process Type:
Dry Etching
Rotation Speed:
1 to 20 rpm
Substrates:
GaAs, GaN, InP
Throughput:
Up to 12 wph
Typical Removal Rates:
60 nm/min
Uniformity:
2%
Wafer Size:
300 mm
more info
SI 500 Image
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Sentech Instruments GmbH - SI 500

Wafer Etching System from Sentech Instruments GmbH
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Applications:
Plamsa Etching
Process Type:
Dry Etching
Substrate Temperature:
-20 to 250 Degree C
Substrates:
GaAs, InP, GaN, InSb, SiC, SiGe
Wafer Size:
Up to 200?mm
more info
BATCHSPRAY Image
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Siconnex Customized Solutions GmbH - BATCHSPRAY

Wafer Etching System from Siconnex Customized Solutions GmbH
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Footprint:
12 m²
Number Of Chambers:
up to 2
Process Type:
Wet Etching
Substrates:
SiC, GaN, Si, GaAs, Ge
Throughput:
Up to 300 wph
Uniformity:
1%
Wafer Size:
200 mm, 300 mm
more info
Episode UL Image
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Tokyo Electron Limited - Episode UL

Wafer Etching System from Tokyo Electron Limited
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Applications:
Dielectric Etching, Conductor, Reactive Ion Etching
Number Of Chambers:
4 to 12
Process Type:
Dry Etching
Substrates:
Si
Wafer Size:
300 mm
more info
Tactras Image
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Tokyo Electron Limited - Tactras

Wafer Etching System from Tokyo Electron Limited
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Applications:
Dielectric Etching, Conductor, Reactive Ion Etching
Number Of Chambers:
1 to 6
Process Type:
Dry Etching
Substrates:
Si
Wafer Size:
300 mm
more info
Certas LEAGA Image
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Tokyo Electron Limited - Certas LEAGA

Wafer Etching System from Tokyo Electron Limited
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Applications:
Dielectric Etching, Chemical Dry Etching
Number Of Chambers:
1 to 6
Process Type:
Dry Etching
Substrates:
Si
Wafer Size:
300 mm
more info
UNITY Me+ Ox Image
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Tokyo Electron Limited - UNITY Me+ Ox

Wafer Etching System from Tokyo Electron Limited
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Applications:
Plamsa Etching
Number Of Chambers:
1 to 4
Process Type:
Dry Etching
Substrates:
Si, glass, SiC, sapphire, LN, LT, AlTic
Wafer Size:
100 mm, 150 mm, 200 mm
more info
UNITY™ Me+ Si & UNITY™ Me+ SiC Image
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Tokyo Electron Limited - UNITY™ Me+ Si & UNITY™ Me+ SiC

Wafer Etching System from Tokyo Electron Limited
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Applications:
Plamsa Etching
Number Of Chambers:
1 to 4
Process Type:
Dry Etching
Substrates:
Si, SiC, Glass
Wafer Size:
100 mm, 150 mm, 200 mm
more info
Gemini Image
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Trion Technology - Gemini

Wafer Etching System from Trion Technology
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Applications:
Plamsa Etching
Etching Speed:
Up to 6 µm/min
Gases Control:
Up to 7 process gases
Process Type:
Dry Etching, Wet Etching
Substrates:
GaAs, AlGaAs, GaN, InP, Al
Wafer Size:
100 to 300 mm
more info
Apollo Image
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Trion Technology - Apollo

Wafer Etching System from Trion Technology
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Applications:
Plamsa Etching
Etching Speed:
Up to 6 µm/min
Gases Control:
Up to 7 process gases
Process Type:
Dry Etching, Wet Etching
Substrates:
GaAs, AlGaAs, GaN, InP, Al
Wafer Size:
100 to 300 mm
more info
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