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Die Bonders - Page 4

125 Die Bonders from 31 Manufacturers meet your specification.
Datacon 8800 FC QUANTUM hS Image
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BE Semiconductor Industries N.V. - Datacon 8800 FC QUANTUM hS

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
0.5 to 15 N
Bonding Method:
Flip Chip Bonder
Field of View:
29 x 29 mm, 16 x 16 mm
Net Weight:
2000 kg
Overall Dimensions:
1600 x 1983 x 1940 mm
Substrate Working Range:
325 x 203 mm
Type:
Automatic
Wafer Die Attach Size:
1 x 1 to 14 x 14 mm
Wafer Die Thickness:
0.05 to 2 mm
Wafer Flip Chip Placement Speed:
Up to 16000 UPH
Wafer Size:
8 to 12 Inches
X Y Placement Accuracy:
± 4 µm at 3 sigma
more info
Datacon 8800 TC advanced Image
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BE Semiconductor Industries N.V. - Datacon 8800 TC advanced

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
3 to 250 N
Bond Head:
2 Heads
Bonding Method:
Flip Chip Bonder
Co Planarity:
± 2 µm at 10 mm
Field of View:
12 x 12 mm
Frame Size:
125 to 375 mm
Overall Dimensions:
1600 x 1200 x 1880 mm
Ramping Speed:
+ 200 Degee C/s (Heating), - 100 Degree C/s (Cooling)
Standard Bond Head:
-4 to 4 Degree rotation
Temperature Uniformity:
± 5 Degree C
Type:
Automatic
Wafer Die Attach Size:
2 to 16 mm
Wafer Die Thickness:
50 µm to 3 mm
Wafer Flip Chip Placement Speed:
Up to 1000 UPH
Wafer Size:
200 to 300 mm
X Y Placement Accuracy:
± 2 µm at 3 sigma
more info
Esec 2009 fSE Image
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BE Semiconductor Industries N.V. - Esec 2009 fSE

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
0.5 to 20 N
Bonding Method:
Die Bonder
Bonding Time:
0 to 32 sec
Frame Size:
152.4 mm, 203 mm
Net Weight:
830 kg
Overall Dimensions:
1970 x 1305 x 1760 mm
Substrate Working Range:
285 x 60 mm
Type:
Automatic
Wafer Die attach Placement Speed:
2500 to 8000 UPH
Wafer Die Attach Size:
0.4 x 0.4 to 11 x 11 mm
Wafer Size:
Up to 8 Inches
X Y Placement Accuracy:
± 80 µm
more info
Esec 2009 SSIE Image
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BE Semiconductor Industries N.V. - Esec 2009 SSIE

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
50 N, 150 N
Bonding Method:
Die Bonder
Bonding Time:
0 to 32 sec
Frame Size:
152.4 mm, 203 mm, 305 mm
Net Weight:
830 kg
Overall Dimensions:
1970 x 1305 x 1760 mm
Substrate Working Range:
280 x 80 mm
Type:
Automatic
Wafer Die attach Placement Speed:
2500 to 8000 UPH
Wafer Die Attach Size:
1 x 1 mm to 11 x 11 mm
Wafer Size:
Up to 8 Inches, 12 Inches
X Y Placement Accuracy:
60 µm
more info
Esec 2100 FC hS Image
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BE Semiconductor Industries N.V. - Esec 2100 FC hS

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
0.2 N
Bonding Method:
Flip Chip Bonder
Frame Size:
152.4 mm, 203 mm, 305 mm
Net Weight:
1400 kg
Overall Dimensions:
1430 x 1440 x 1400 mm
Substrate Working Range:
500 x 125 mm
Type:
Automatic
Wafer Die Attach Size:
0.2 to 20 mm
Wafer Die Thickness:
= 0.05 mm
Wafer Flip Chip Placement Speed:
Up to 12000 UPH
Wafer Flip Chip Without Dipping Placement Speed:
Up to 16000 UPH
Wafer Size:
4 to 12 Inches
X Y Placement Accuracy:
8 µm
more info
Esec 2100 hS Image
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BE Semiconductor Industries N.V. - Esec 2100 hS

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
0.2 to 20 N
Bonding Method:
Die Bonder
Compressed Air:
5.2 bar
Frame Size:
310 x 100 mm
Mean Time Between Failure:
> 200 h
Net Weight:
1400 kg
Overall Dimensions:
1785 x 1448 x 1400 mm
Power Supply:
208 - 230 VAC (@ 47 - 63 Hz), 800 - 1100VA
Standard Bond Head:
360 Degree
Type:
Automatic
Wafer Die attach Placement Speed:
Up to 18500 UPH
Wafer Die Attach Size:
0.25 to 20 mm
Wafer Die Thickness:
> 0.075 mm
Wafer Size:
4 to 12 Inches
X Y Placement Accuracy:
20 µm
more info
Esec 2100 hS ix Image
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BE Semiconductor Industries N.V. - Esec 2100 hS ix

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
0.2 to 10 N
Bonding Method:
Die Bonder
Compressed Air:
5.2 bar
Frame Size:
203 x 305
Heated Bond Head:
170 Degree C
Mean Time Between Failure:
> 200 h
Net Weight:
1400 kg
Overall Dimensions:
1785 x 1448 x 1400 mm
Power Supply:
208 - 230 VAC (@ 47 - 63Hz), 800 - 1100VA
Standard Bond Head:
360 Degree
Substrate Thickness:
0.1 to 0.5 mm
Substrate Working Range:
300 x 102 mm
Type:
Automatic
Wafer Die attach Placement Speed:
Up to 18500 UPH
Wafer Die Attach Size:
0.15 to 8 mm
Wafer Die Thickness:
> 0.075 mm
Wafer Size:
4 to 12 Inches
X Y Placement Accuracy:
18 µm (High Speed Mode), 12 µm (Accuracy Mode), 10 µm (Up Looking Vision), 20 µm
more info
Esec 2100 hSi Image
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BE Semiconductor Industries N.V. - Esec 2100 hSi

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
0.2 to 20 N
Bonding Method:
Die Bonder
Frame Size:
203 x 305
Heated Bond Head:
200 Degree C max
Mean Time Between Failure:
> 200 h
Net Weight:
1400 kg
Overall Dimensions:
1785 x 1448 x 1400 mm
Standard Bond Head:
360 Degree
Substrate Thickness:
0.1 to 2.5 mm
Substrate Working Range:
300 x 100 mm
Type:
Automatic
Wafer Die attach Placement Speed:
Up to 18500 UPH
Wafer Die Attach Size:
0.5 to 20 mm
Wafer Die Thickness:
> 0.075 mm
Wafer Size:
4 to 12 Inches
X Y Placement Accuracy:
18 µm (High Speed Mode), 12 µm (Accuracy Mode), 10 µm (Up Looking Vision), 20 µm
more info
Esec 2100 SC Image
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BE Semiconductor Industries N.V. - Esec 2100 SC

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
50 N
Bonding Method:
Die Bonder
Frame Size:
203 x 305
Overall Dimensions:
3040 x 1448 x 1680 mm
Type:
Automatic
Wafer Die Attach Size:
0.5 to 20 mm
Wafer Size:
4 to 12 Inches
X Y Placement Accuracy:
Down to 25 µm
more info
Esec 2100 sD advanced i Image
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BE Semiconductor Industries N.V. - Esec 2100 sD advanced i

Die Bonder from BE Semiconductor Industries N.V.
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Bond Force:
0.2 to 50 N
Bonding Method:
Die Bonder
Frame Size:
203 x 305
Heated Bond Head:
200 Degree C max
Mean Time Between Failure:
> 200 h
Net Weight:
1600 kg
Overall Dimensions:
1785 x 1448 x 1400 mm
Standard Bond Head:
360 Degree
Substrate Thickness:
0.1 to 2.5 mm
Substrate Working Range:
300 x 125 mm
Type:
Automatic
Wafer Die Attach Size:
0.5 to 20 mm
Wafer Die Thickness:
> 0.075 mm
Wafer Size:
6 to 12 Inches
X Y Placement Accuracy:
15 µm (High Speed Mode), 10 µm (Accuracy Mode), 8 µm (Up Looking Vision)
more info
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