Die Bonders - Page 10

125 Die Bonders from 31 Manufacturers meet your specification.
Bond Force:
1 to 20 Kgf
Bonding Method:
Die Bonder
Heated Bond Head:
-150 Degree C, -400 Degree C
Mean Time Between Failure:
< 1 hrs
Substrate Working Range:
300 x 200 mm
Type:
Automatic
Wafer Die Attach Size:
1 to 60 mm
X Y Placement Accuracy:
± 7 µm
more info
Bond Force:
10 to 343 N
Bonding Cycle Time:
1.7 sec
Bonding Method:
Flip Chip Bonder
Heated Bond Head:
30 to 550 Degree C
Overall Dimensions:
2680 x 1440 x 1850 mm
Type:
Automatic
Wafer Size:
6 Inches, 8 Inches
X Y Placement Accuracy:
20 µm
more info
Bond Force:
10 to 343 N
Bonding Cycle Time:
1.3 sec
Bonding Method:
Flip Chip Bonder
Heated Bond Head:
30 to 550 Degree C
Overall Dimensions:
2894 x 1624 x 1840 mm
Type:
Automatic
Wafer Size:
8 Inches, 12 Inches
X Y Placement Accuracy:
1.5 µm
more info
Bonding Method:
Die Bonder
Overall Dimensions:
3750 x 1200 x 1650 mm
Substrate Working Range:
300 x 300 mm
Type:
Automatic
Wafer Die attach Placement Speed:
240 to 250 UPH
Wafer Die Attach Size:
1.52 x 1.52 mm
X Y Placement Accuracy:
±50 µm
more info
Bonding Method:
Die Bonder
Overall Dimensions:
3750 x 1200 x 1650 mm
Substrate Working Range:
300 x 300 mm
Type:
Automatic
Wafer Die attach Placement Speed:
7000 UPH
Wafer Die Attach Size:
1.52 x 1.52 mm
X Y Placement Accuracy:
± 50 µm
more info
Bonding Method:
Die Bonder
Overall Dimensions:
3950 x 1200 x 1650 mm
Type:
Automatic
Wafer Die attach Placement Speed:
90000 UPH
Wafer Die Attach Size:
1.52 x 1.52 mm
X Y Placement Accuracy:
± 50 µm
more info
Bond Force:
1 to 100 N
Bonding Method:
Flip Chip Bonder
Chip Size:
12 mm
Net Weight:
2000 kg
Overall Dimensions:
1985 x 2470 x 1950 mm
Substrate Working Range:
240 x 100 mm
Type:
Automatic
Wafer Size:
12 Inches
X Y Placement Accuracy:
± 2 µm
more info
Bond Force:
1 to 100 N
Bonding Method:
Flip Chip Bonder
Chip Size:
12 mm
Net Weight:
2200 kg
Overall Dimensions:
2690 x 1990 x 2000 mm
Type:
Automatic
Wafer Size:
12 Inches
X Y Placement Accuracy:
± 2 µm
more info
Bond Force:
Up 60 kN, 100 kN
Bond Force Repeatability:
< ± 2%
Bonding Method:
Wafer Bonder
Bonding Tool Setting Temperature:
Up to 550 Degree C
Chamber Pressure:
5 x 10-5 mbar to 3 bar
Cooling Rate:
30 K/min
Temperature Uniformity:
< 1 %
Type:
Automatic
Wafer Size:
Up to 200 mm
more info
Bond Force:
60 kN, 100 kN
Bond Force Repeatability:
< ± 2%
Bonding Method:
Wafer Bonder
Bonding Tool Setting Temperature:
Up to 550 Degree C
Chamber Pressure:
5 x 10-5 mbar
Compressed Air:
6 to 7 bar
Cooling Rate:
Up to 30 K/min
Net Weight:
700 kg
Overall Dimensions:
1469 x 778 x 1710 mm
Substrate Working Range:
4 Inches, 6 Inches, 8 Inches
Temperature Uniformity:
1.50%
Type:
Automatic
Wafer Size:
4 Inches, 6 Inches, 8 Inches
more info