Die Bonders - Page 2

125 Die Bonders from 31 Manufacturers meet your specification.
Bond Force:
0.2 to 1 N
Bonding Method:
Die Bonder
Chip Size:
0.15 to 1 mm
Net Weight:
2100 kg
Overall Dimensions:
1600 x 1920 x 1700 mm
Type:
Automatic
Wafer Chip Thickness:
0.015 mm
Wafer Die Attach Size:
2.5 mm
Wafer Size:
8 Inches, 12 Inches
X Y Placement Accuracy:
± 5 µm
more info
Bond Force:
10 to 200 N
Bonding Method:
Flip Chip Bonder
Chip Size:
1 x 10 mm to 4 x 25 mm
Heated Bond Head:
RT to 250 Degree C
Net Weight:
2400 kg
Overall Dimensions:
2900 x 1500 x 1950 mm
Type:
Automatic
X Y Placement Accuracy:
± 3 µm
more info
Bond Force:
10 to 200 N
Bonding Method:
Flip Chip Bonder
Chip Size:
3 to 10 mm
Heated Bond Head:
RT to 250 Degree C
Net Weight:
2400 kg
Overall Dimensions:
1320 x 1800 x 1780 mm
Substrate Working Range:
50 x 80 to 80 x 200 mm
Type:
Automatic
Wafer Size:
50 x 80 mm to 80 x 200 mm
X Y Placement Accuracy:
± 3 µm
more info
Bond Force:
1 to 100 N
Bonding Cycle Time:
10 sec/chip, 6 sec/chip
Bonding Method:
Flip Chip Bonder
Chip Size:
0.8 to 30 mm
Heated Bond Head:
RT to 50 Degree C
Net Weight:
120 kg
Overall Dimensions:
702 x 805 x 740 mm
Power Supply:
100 V
Substrate Working Range:
150 x 300 mm
Type:
Semi Automatic
X Y Placement Accuracy:
± 2 µm, ± 5 µm
more info
Bond Force:
1 to 100 N
Bonding Cycle Time:
10 sec/chip, 6 sec/chip
Bonding Method:
Flip Chip Bonder
Chip Size:
0.8 to 30 mm
Heated Bond Head:
RT to 250 Degree C
Net Weight:
120 kg
Overall Dimensions:
702 x 805 x 740 mm
Power Supply:
200 V
Substrate Working Range:
150 x 300 mm
Type:
Semi Automatic
X Y Placement Accuracy:
± 2 µm, ± 5 µm
more info
Bond Head:
2 Heads
Bonding Cycle Time:
8000 chip/h
Bonding Method:
Flip Chip Bonder
Chip Size:
0.4 to 35 mm
Net Weight:
2200 kg
Overall Dimensions:
1800 x 1550 x 1650 mm
Power Supply:
AC200V, 50/60 Hz
Substrate Working Range:
50 to 330 x 220 mm
Type:
Automatic
Wafer Size:
8 Inches, 12 Inches
X Y Placement Accuracy:
± 8 µm
more info
Bond Force:
3 to 300 N
Bonding Method:
Manual Bonder
Chip Size:
30 to 40 mm
Heated Bond Head:
RT to 450 Degree C
Net Weight:
550 kg
Overall Dimensions:
1200 x 1000 x 1700 mm
Substrate Working Range:
10 to 100 mm
Type:
Manual
X Y Placement Accuracy:
± 5 µm
more info
Bond Force:
0.049 to 4.9 N
Bonding Method:
Flip Chip Bonder
Chip Size:
0.3 x 0.3 mm to 30 x 30 mm
Heated Bond Head:
RT to 450 Degree C
Net Weight:
4900 kg
Overall Dimensions:
1320 x 2120 x 1815 mm
Substrate Working Range:
200 x 200 mm
Type:
Automatic
Wafer Size:
8 Inches
X Y Placement Accuracy:
± 0.5 µm
more info
Bonding Cycle Time:
1.2 sec/pc
Bonding Method:
Die Bonder
Overall Dimensions:
1150 x 1250 x 1700 mm
Type:
Automatic
Wafer Size:
6 Inches
more info
Bond Force:
3 g up to 2000 g
Bonding Cycle Time:
< 15 sec
Bonding Method:
Die Bonder, Flip Chip Bonder
Compressed Air:
5.5 bar
Net Weight:
2000 kg
Overall Dimensions:
1690 x 1430 x 2040 mm
Power Supply:
400 V
Standard Bond Head:
360 Degree
Substrate Working Range:
Very Small Submounts to 300 mm
Type:
Automatic
Wafer Size:
300 x 300 mm
X Y Placement Accuracy:
± 1 µm
more info